We are seeking a highly skilled, self-motivated epitaxy process engineer for developing and implementing GaAs epitaxy processes for Micro-LED display technologies. You will work with emerging displays technologies, in ensuring that we successfully bring these technologies to our customers, in the industry leading bar that we’ve established.
Responsibilities
Develop and optimize epitaxial growth recipes for InGaAlP micro-LED display.
Monitor and analyze key material properties such as thickness, composition, uniformity, crystal quality, and defect density using metrology tools.
Perform root cause analysis and implement process improvements to enhance material quality and yield.
Collaborate with device, process, and reliability teams to align epitaxial structures with device performance requirements.
Take ownership for equipment, monitor process and characterization equipment performances
Establish and execute data collection/analysis activities for high complexity technical issues
Maintain standard operating procedures and traceability
Publish technical literature and reports in relation to process innovations and be primary link with internal and external product design as appropriate
Qualifications
Minimum Qualifications:
Master’s degree in Electrical Engineering, Physics, Materials Science, or a related field.
3 years of hands-on experience in compound semiconductor MOCVD epitaxial growth engineering technical environment.
3 years of hands-on experience with characterization of epitaxy wafers by PL, SIMS, XRD, AFM and TEM.
Preferred Qualifications:
PhD degree in Electrical Engineering, Physics, Materials Science, or a related field.
5 years of hands-on experience with MOCVD of laser, LEDs, or photodetectors.
Solid understanding of III-V semiconductor materials and device physics.
Familiarity with statistical and data analysis tools (e.g., JMP, Minitab, Python).
Job Types: Full-time, Permanent
Pay: $30,000.00 - $60,000.00 per month
Benefits:
Employee pension
Medical Insurance
Work Location: In person